NANOSTRUCTURES: RF CHARACTERIZATION, MODELING AND APPLICATIONS
Sunday, January 15, 2006
2:00 PM–6:00 PM
- Islamshah Amlani, Motorola
- Keith A. Jenkins, IBM
Peter Burke, University of California at Irvine
"AC Performance of Nanoelectronics"
Dinkar V. Singh and Keith A. Jenkins, IBM TJ Watson Research Center
"High Frequency Measurement of CNFETs: Experiences and Outlook"
Sami Rosenblatt , Cornell University
"Single-walled carbon nanotube high-frequency mixers"
Henri Happy, CEA Saclay - Commissariat à l'Energie Atomique
"HF Characterization of CNTFET"
Glenn H. Martin, Universal Filmworks
"Design considerations for High Frequency 'On-Wafer' measurements"
Loren Betts and Hassan Tanbakuchi, Agilent Technologies
"Challenges in Measuring S-parameters of High Impedance States in Carbon Nanotube Structures"
Jon Martens , Anritsu Company
"High Impedance S-parameter Measurements"
Dan Woodward, Tektronix
"Testing Frequency Response of High Impedance CNT Transistors"
Nanostructures such as carbon nanotubes, nanowires, and many variations are emerging with interesting and novel properties. DC characterization of these structures has demonstrated their excellent transport properties with near ballistic conduction. Despite tremendous interest and progress, RF characterization has proven challenging. Standard measurement tools and methodologies suitable to match the high intrinsic impedance and low output signal levels of these structures have not emerged yet. Another challenge to be addressed is the modeling of these nanostructures in order to extract the intrinsic performance of these nanodevices. This workshop will bring together speakers from industry, academia, and suppliers to discuss progress, opportunities, challenges and potential solutions relating to this exciting and emerging class of technologies.
From Noon 14 Jan, 2006
17-19 Jan, 2006